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INDIUM OXIDE-TUNGSTEN OXIDE BASED TRANSPARENT CONDUCTIVE FILM, AND METHOD FOR MANUFACTURING THE SAME

机译:基于氧化铟-氧化钨的透明导电膜及其制造方法

摘要

PROBLEM TO BE SOLVED: To provide a conductive film which hardly causes residues during etching, and a method for manufacturing the same.;SOLUTION: The method for manufacturing the transparent conductive film containing at least indium oxide and tungsten oxide by a sputtering method includes a sputtering step of performing the sputtering in the atmosphere of sputtering gas containing hydrogen or water and depositing the transparent conductive film. The transparent conductive film containing at least indium oxide and tungsten oxide manufactured by the above method is also provided. The transparent conductive film deposited in the above atmosphere hardly causes residues during the etching.;COPYRIGHT: (C)2006,JPO&NCIPI
机译:解决的问题:提供一种在蚀刻过程中几乎不引起残留的导电膜及其制造方法。解决方案:通过溅射法制造至少包含氧化铟和氧化钨的透明导电膜的方法包括:溅射步骤,在包含氢或水的溅射气体的气氛中进行溅射,并沉积透明导电膜。还提供通过上述方法制造的至少包含氧化铟和氧化钨的透明导电膜。在上述环境中沉积的透明导电膜几乎不会在蚀刻过程中产生残留物。;版权所有:(C)2006,JPO&NCIPI

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