METHOD FOR EVALUATING SILICON SINGLE-CRYSTAL WAFER, AND SILICON SINGLE-CRYSTAL WAFER USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method which is applied to a manufacturing process carried out prior to shipment of wafers, and evaluates a state of surface of a wafer by exposing latent strain on the surface.;SOLUTION: In a step (1) of the method, a silicon single-crystal wafer is subjected to an elicitation process wherein a heating process is carried out under a condition of not less than 900-1,250°C×1 sec at rising and falling temperature rates of 10-300°C/sec, and then the surface state of the silicon single-crystal wafer is evaluated. This elicitation process is carried out preferably, by using a sheet-feed type heat-treating furnace in order to enable factors causing process strains to be determined appropriately. In a step (2), the evaluation method of the step (1) is applied after the chamfering process of the wafer.;COPYRIGHT: (C)2006,JPO&NCIPI