METHOD FOR EVALUATING CARBON CONCENTRATION IN SILICON SAMPLE, METHOD FOR EVALUATING SILICON WAFER PRODUCTION PROCESS, METHOD FOR MANUFACTURING SILICON WAFER, METHOD FOR MANUFACTURING SILICON SINGLE-CRYSTAL INGOT, SILICON SINGLE-CRYSTAL INGOT, AND SILICON WAFER

摘要

Provided is a method for evaluating carbon concentration in a silicon sample, the method comprising: forming an oxide film on at least part of the surface of a silicon sample to be evaluated; irradiating the surface of the oxide film with a particle beam; irradiating the surface of the oxide film, which has been irradiated with the particle beam, with excitation light having a larger energy than the band gap of silicon; measuring the strength of photoluminescence emitted from the silicon sample to be evaluated irradiated with the excitation light; and evaluating, on the basis of the measured strength of the photoluminescence, the carbon concentration in the silicon sample to be evaluated, the photoluminescence being a band-edge emission of silicon.