LIGHT-EMITTING DEVICE HAVING ELEMENT FOR INCREASING EFFECTIVE CARRIER CAPTURING CROSS-SECTIONAL AREA OF QUANTUM WELL

摘要

PROBLEM TO BE SOLVED: To provide a light-emitting device having improved characteristic temperature and a differentiated quantum efficiency.;SOLUTION: The light emitting device includes first barrier layers (202, 302, 402) and second barrier layers (201, 301, 401) containing gallium arsenide (GaAs), quantum well layers (205, 305, 406) made of indium gallium arsenide nitrogen (InGaAsN), and first layers (203, 303, 404) interposed in between the quantum well layer and the first barrier layer and made of GaAs and a material containing other elements. The material of the first layer has a band gap energy in between the band gap energy of the first barrier layer and the band gap energy of the quantum well layer.;COPYRIGHT: (C)2005,JPO&NCIPI