METHOD OF SETTING amp;mu; WAVE POWER IN MANUFACTURE OF SEMICONDUCTOR BY USE OF PLASMA, EQUIPMENT FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SETTING METHOD, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SETTING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a μ wave power setting method and the like in the manufacture of a semiconductor by the use of plasma, wherein factors, such as the change with time, events or the like, causing fluctuations are eliminated.;SOLUTION: An apparatus for manufacturing a semiconductor device is equipped with a Vpp measurement circuit 15 which measures the peak-to-peak voltage Vpp of bias high-frequency signals applied on plasma when a μ wave power is changed, μ wave power-dependent Vpp characteristics are previously grasped, a μ wave power value is set at a μ wave power supply control circuit 17 on the basis of the Vpp characteristics so as to make a Vpp situated in a stable region, and a μ wave power supply 10 is controlled by the μ wave power supply control circuit 17 to output a μ wave power set value so that processes hardly vary even when the processed wafers are increased in number.;COPYRIGHT: (C)2005,JPO&NCIPI