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METHOD OF EVALUATING SILICON-BASED THIN FILM FOR SOLAR CELL, AND METHOD FOR MANUFACTURING THE SOLAR CELL

机译:太阳能电池硅基薄膜的评估方法及太阳能电池的制造方法

摘要

PROBLEM TO BE SOLVED: To provide a method of evaluating a silicon-based thin film for a solar cell, for analyzing the film quality of the silicon-based thin film formed on a substrate which does not allow infrared rays from passing.;SOLUTION: In the method of evaluating the silicon-based thin film for the solar cell, infrared rays 10 are emitted to an amorphous silicon thin film 3, that is formed on a transparent glass substrate 5, such as soda glass for preventing infrared rays from being transmitted, and is used for the solar cell, and an absorption spectrum 17 of reflected waves reflected by the amorphous silicon-based thin film 3 is analyzed, thus estimating a light-degradation ratio in the amorphous silicon thin film 3.;COPYRIGHT: (C)2005,JPO&NCIPI
机译:解决的问题:提供一种评估太阳能电池用硅基薄膜的方法,以分析形成在不允许红外线通过的基板上的硅基薄膜的膜质量。在评估用于太阳能电池的硅基薄膜的方法中,红外线10发射到非晶硅薄膜3上,该非晶硅薄膜3形成在透明玻璃基板5上,例如苏打玻璃以防止红外线透射,并将其用于太阳能电池,分析由非晶硅基薄膜3反射的反射波的吸收光谱17,从而估计非晶硅薄膜3中的光降解率。 )2005,日本特许厅

著录项

  • 公开/公告号JP2005228993A

    专利类型

  • 公开/公告日2005-08-25

    原文格式PDF

  • 申请/专利权人 MITSUBISHI HEAVY IND LTD;

    申请/专利号JP20040037408

  • 发明设计人 MORI SHINICHIRO;TAKANO GIYOUMI;

    申请日2004-02-13

  • 分类号H01L31/04;G01N21/27;G01N21/35;

  • 国家 JP

  • 入库时间 2022-08-21 22:34:38

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