首页> 外国专利> PROCESS FOR FABRICATING THIN FILM INTEGRATED CIRCUIT DEVICE, NONCONTACT THIN FILM INTEGRATED CIRCUIT DEVICE AND ITS FABRICATION PROCESS, ID TAG AND COIN HAVING NONCONTACT THIN FILM INTEGRATED CIRCUIT DEVICE

PROCESS FOR FABRICATING THIN FILM INTEGRATED CIRCUIT DEVICE, NONCONTACT THIN FILM INTEGRATED CIRCUIT DEVICE AND ITS FABRICATION PROCESS, ID TAG AND COIN HAVING NONCONTACT THIN FILM INTEGRATED CIRCUIT DEVICE

机译:制造薄膜集成电路设备,非接触薄膜集成电路设备及其制造过程,ID标签和硬币的过程非接触薄膜集成电路设备

摘要

PROBLEM TO BE SOLVED: To provide a thin film integrated circuit which can be mass produced at low cost, and to provide its fabrication process.;SOLUTION: The process for fabricating a thin film integrated circuit device comprises steps for forming a release layer on a substrate, for forming an underlying film on the release layer, for forming a plurality of thin film integrated circuits on the underlying layer, for forming grooves on the boundary of the plurality of thin film integrated circuits, for introducing gas or liquid containing fluorine halide to the grooves, and for separating the plurality of thin film integrated circuits by removing the release layer. Consequently, a thin film integrated circuit being employed in a thin film integrated circuit device can be fabricated at low cost.;COPYRIGHT: (C)2005,JPO&NCIPI
机译:解决的问题:提供一种可以低成本大量生产的薄膜集成电路,并提供其制造工艺。解决方案:薄膜集成电路器件的制造工艺包括以下步骤:基板,用于在剥离层上形成基底膜,用于在基底层上形成多个薄膜集成电路,用于在多个薄膜集成电路的边界上形成凹槽,用于将含卤化氟的气体或液体引入所述凹槽,用于通过去除所述释放层来分离所述多个薄膜集成电路。因此,可以以低成本制造在薄膜集成电路器件中使用的薄膜集成电路。版权所有:(C)2005,JPO&NCIPI

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