首页> 外国专利> COATING LIQUID FOR FORMING LOW TRANSMISSION TRANSPARENT ELECTROCONDUCTIVE FILM, LOW TRANSMISSION TRANSPARENT ELECTROCONDUCTIVE FILM, LOW TRANSMISSION TRANSPARENT ELECTROCONDUCTIVE BASE MATERIAL AND DISPLAY APPLIED WITH THIS BASE MATERIAL

COATING LIQUID FOR FORMING LOW TRANSMISSION TRANSPARENT ELECTROCONDUCTIVE FILM, LOW TRANSMISSION TRANSPARENT ELECTROCONDUCTIVE FILM, LOW TRANSMISSION TRANSPARENT ELECTROCONDUCTIVE BASE MATERIAL AND DISPLAY APPLIED WITH THIS BASE MATERIAL

机译:用于形成低透射率透明导电膜,低透射率透明导电膜,低透射率透明导电基体材料的涂层液,以及用于该基体材料的显示

摘要

PPROBLEM TO BE SOLVED: To provide a low transmission transparent electroconductive base material which has good electroconductivity and film-formability, can further add a low reflectivity, an antistatic/electric field-shielding function, and a contrast-improvement effect as well, and can work to reduce the production cost. PSOLUTION: The low transmission transparent electroconductive base material has a low transmission two-layer film composed of a low transmission transparent electroconductive film and a transparent coat layer. The low transmission transparent electroconductive film has carbon black fine particles having a specific surface area of 201-499 mSP2/SP/g and an inorganic binder matrix (A) as the major components, and the transparent coat layer is constituted of an inorganic binder matrix (B) as the major component, and the reflectivity which comes to a minimum in the reflection spectrum of the visible light range of the low transmission transparent electroconductive base material is 2%, and the surface resistance and the visible light transmission of the low transmission two-layer film are 10SP4/SPto 10SP8/SP/square, and 40 to 95%, respectively. PCOPYRIGHT: (C)2005,JPO&NCIPI
机译:

要解决的问题:提供一种具有良好的导电性和成膜性,可以进一步增加低反射率,抗静电/电场屏蔽功能以及提高对比度的低透射率透明导电性基材。 ,并可以降低生产成本。

解决方案:低透射率透明导电性基材具有由低透射率透明导电性膜和透明涂层构成的低透射率两层膜。低透射率透明导电膜以比表面积为201〜499m 2 / g的炭黑微粒和无机粘合剂基质(A)为主要成分,透明涂层为由无机粘合剂基质(B)作为主要成分构成,低透射率透明导电性基材的可见光范围的反射光谱中的反射率最小,为2%,表面电阻和可见光低透射率两层膜的透光率分别为10 4 至10 8 /平方和40至95%。

版权:(C)2005,JPO&NCIPI

著录项

  • 公开/公告号JP2005048056A

    专利类型

  • 公开/公告日2005-02-24

    原文格式PDF

  • 申请/专利权人 SUMITOMO METAL MINING CO LTD;

    申请/专利号JP20030281284

  • 发明设计人 OTSUKA YOSHIHIRO;YUKINOBU MASAYA;

    申请日2003-07-28

  • 分类号C09D5/24;B32B7/02;C09D1/00;G02B1/10;G02B5/00;H01B1/24;H01B5/14;

  • 国家 JP

  • 入库时间 2022-08-21 22:31:43

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