首页> 外国专利> MASK FOR EXPOSURE, OPTICAL PROXIMITY EFFECT CORRECTION APPARATUS, OPTICAL PROXIMITY EFFECT CORRECTION METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND OPTICAL PROXIMITY EFFECT CORRECTION PROGRAM

MASK FOR EXPOSURE, OPTICAL PROXIMITY EFFECT CORRECTION APPARATUS, OPTICAL PROXIMITY EFFECT CORRECTION METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND OPTICAL PROXIMITY EFFECT CORRECTION PROGRAM

机译:曝光掩模,光学邻近效应校正装置,光学邻近效应校正方法,制造半导体器件的方法以及光学邻近效应校正程序

摘要

PROBLEM TO BE SOLVED: To enhance efficiency of an optical proximity effect correction while suppressing deterioration in the accuracy of the optical proximity effect correction.;SOLUTION: An inspection region R1 is determined with respect to a mask pattern MP1. When the pattern density of the inspection region R1 is less than a specified value, an objective pattern P1 in the inspection region R1 is subjected to optical proximity effect correction in a specified correction amount.;COPYRIGHT: (C)2005,JPO&NCIPI
机译:解决的问题:在抑制光学邻近效应校正的准确性的恶化的同时,提高光学邻近效应校正的效率。解决方案:相对于掩模图案MP1确定检查区域R1。当检查区域R1的图案密度小于指定值时,对检查区域R1中的目标图案P1进行指定校正量的光学邻近效应校正。;版权所有:(C)2005,JPO&NCIPI

著录项

  • 公开/公告号JP2004341159A

    专利类型

  • 公开/公告日2004-12-02

    原文格式PDF

  • 申请/专利权人 SEIKO EPSON CORP;

    申请/专利号JP20030136913

  • 发明设计人 AKIYAMA HISASHI;

    申请日2003-05-15

  • 分类号G03F1/08;H01L21/027;

  • 国家 JP

  • 入库时间 2022-08-21 22:30:22

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