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DRY ETCHING METHOD USING LIGHT EMISSION, DRY ETCHING CONTROL DEVICE AND DRY ETCHING DEVICE HAVING THE CONTROL DEVICE

机译:使用发光的干刻法,干刻控制装置以及具有该控制装置的干刻装置

摘要

PROBLEM TO BE SOLVED: To readily adjust selectivity to a target value.;SOLUTION: A lookup table of light emission strength and treatment conditions and selectivity in dry etching is prepared in advance. When dry etching is started, light emission intensity of plasma emission is detected, compared with selectivity which is the target set in an etching program. When it is not the plasma emission strength corresponding to the set selectivity, dry etching treatment conditions are adjusted based on data of the lookup table so that emission strength of plasma light emission is the plasma light emission strength corresponding to the target selectivity.;COPYRIGHT: (C)2005,JPO&NCIPI
机译:解决的问题:为了容易地将选择性调节至目标值;解决方案:预先准备了发光强度和处理条件以及干法蚀刻中的选择性的查找表。当开始干法蚀刻时,与作为蚀刻程序中设定的目标的选择性相比,检测到等离子体发射的发光强度。当不是与设定的选择性相对应的等离子体发射强度时,基于查找表的数据调整干法蚀刻处理条件,以使等离子体发光的发射强度为与目标选择性相对应的等离子体发光强度。 (C)2005,日本特许厅

著录项

  • 公开/公告号JP2005033096A

    专利类型

  • 公开/公告日2005-02-03

    原文格式PDF

  • 申请/专利权人 RICOH OPT IND CO LTD;

    申请/专利号JP20030272749

  • 发明设计人 YOSHIDA TAKAKATSU;

    申请日2003-07-10

  • 分类号H01L21/3065;

  • 国家 JP

  • 入库时间 2022-08-21 22:30:17

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