首页> 外国专利> HIGH PURITY VANADIUM, TARGET COMPOSED OF VANADIUM, THIN FILM OF VANADIUM, METHOD OF PRODUCING VANADIUM, AND METHOD OF PRODUCING SPUTTERING TARGET OF VANADIUM

HIGH PURITY VANADIUM, TARGET COMPOSED OF VANADIUM, THIN FILM OF VANADIUM, METHOD OF PRODUCING VANADIUM, AND METHOD OF PRODUCING SPUTTERING TARGET OF VANADIUM

机译:高纯钒,组成钒的靶标,钒的薄膜,制造钒的方法以及制造钒的溅射靶的方法

摘要

PROBLEM TO BE SOLVED: To produce high purity vanadium in which the isotopes of U, Th or the like radiating alpha particles and exerting adverse effects on a micro-circuit in a semiconductor device are strictly reduced, to provide a target composed of the high purity vanadium, to provide a high purity vanadium thin film, to provide a method of producing the high purity vanadium for strictly reducing the isotopes of U, Th or the like and to provide a method of producing the vanadium sputtering target.;SOLUTION: In the high purity vanadium, the contents of impurities such as the isotopes of U and the isotopes of Th producing radiation are made to be1 wtppb, respectively. The target and thin film are composed of the vanadium.;COPYRIGHT: (C)2005,JPO&NCIPI
机译:解决的问题:生产高纯度的钒,其中严格减少U,Th等辐射α粒子的同位素并对半导体器件中的微电路产生不利影响,以提供由高纯度组成的靶钒,以提供高纯度的钒薄膜,提供一种生产高纯度钒的方法,以严格还原U,Th等的同位素,并提供一种生产钒溅射靶的方法。在高纯度钒中,使杂质(如U的同位素和Th的放射性同位素)的含量分别小于1 wtppb。靶材和薄膜由钒组成。版权所有:(C)2005,JPO&NCIPI

著录项

  • 公开/公告号JP2005113191A

    专利类型

  • 公开/公告日2005-04-28

    原文格式PDF

  • 申请/专利权人 NIKKO MATERIALS CO LTD;

    申请/专利号JP20030348044

  • 发明设计人 SHINDO YUICHIRO;

    申请日2003-10-07

  • 分类号C22B34/22;C23C14/14;C23C14/34;C25C3/26;

  • 国家 JP

  • 入库时间 2022-08-21 22:29:42

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号