首页> 外国专利> METHOD FOR MANUFACTURING HIGH-PURITY VANADIUM, HIGH- PURITY VANADIUM, SPUTTERING TARGET COMPOSED OF THE HIGH- PURITY VANADIUM, AND THIN FILM DEPOSITED USING THE SPUTTERING TARGET

METHOD FOR MANUFACTURING HIGH-PURITY VANADIUM, HIGH- PURITY VANADIUM, SPUTTERING TARGET COMPOSED OF THE HIGH- PURITY VANADIUM, AND THIN FILM DEPOSITED USING THE SPUTTERING TARGET

机译:制造高纯钒,高纯钒,由高纯钒组成的溅射靶以及使用溅射靶沉积的薄膜的方法

摘要

PROBLEM TO BE SOLVED: To provide a method for efficiently manufacturing high-purity vanadium from vanadium raw material (vanadium oxide) containing iron, aluminum, silicon, carbon, oxygen, etc., in large quantities and to provide a technology for efficiently manufacturing high-purity vanadium of =4 N (99.99 wt.%) purity from the raw material. SOLUTION: The high-purity vanadium can be manufactured by: subjecting crude vanadium raw material composed of vanadium oxide to acid leaching to prepare vanadium solution; adding alkaline solution to it to carry out pH adjustment; adding ammonium chloride to precipitate high-purity ammonium vanadate; roasting the resultant high-purity ammonium vanadate precipitate to obtain high-purity vanadium oxide; and reducing the high-purity vanadium oxide to form the high-purity vanadium.
机译:解决的问题:提供一种从大量含铁,铝,硅,碳,氧等的钒原料(钒氧化物)中有效地制造高纯度钒的方法,并提供一种有效地制造高纯度钒的技术。 -纯度> = 4 N(99.99 wt。%)的纯钒。解决方案:高纯度钒可以通过以下方法制造:对由氧化钒构成的粗钒原料进行酸浸以制备钒溶液;然后对钒进行精制。加入碱性溶液进行pH调节。加入氯化铵沉淀出高纯度钒酸铵。焙烧所得高纯度钒酸铵沉淀,得到高纯度氧化钒。还原高纯钒氧化物,形成高纯钒。

著录项

  • 公开/公告号JP2003138326A

    专利类型

  • 公开/公告日2003-05-14

    原文格式PDF

  • 申请/专利权人 NIKKO MATERIALS CO LTD;

    申请/专利号JP20010333644

  • 发明设计人 SHINDO YUICHIRO;

    申请日2001-10-31

  • 分类号C22B34/22;C22B3/44;C22B5/04;C22B9/04;C23C14/14;C23C14/34;

  • 国家 JP

  • 入库时间 2022-08-22 00:19:01

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