Layout and design of phase-shift photolithography dichroic mask

摘要

How to define the layout of all phases to define the material layer of the present invention relates an integrated circuit is disclosed. This method can be used to refine the phase shifter define to define a layer substantially with the phase Shifuteingu, and placement. Through [MEANS FOR SOLVING PROBLEMS] process, the opening of the alternate, a computer-readable definition of dark field phase shift mask, and a computer-readable definition of complementary mask is generated. The mask is used to produce the material layer of the integrated circuit and can be produced from the definition. This facilitates the mask manufacturing at the same time, the separation between the cutting, is designed to maximize the amount of each of the features defined by the phase mask Shifuteingu or phase shifter. It is used to select the phase assignment of higher quality by reducing the phase collision cost function describes the relative quality of the phase assignments.