SEMICONDUCTOR LASER ELEMENT, SEMICONDUCTOR LASER DEVICE, OPTICAL PICKUP DEVICE, AND PROCESS FOR FABRICATING SEMICONDUCTOR LASER DEVICE

摘要

PROBLEM TO BE SOLVED: To enhance the reliability of an infrared semiconductor laser element having a clad layer composed of a material containing phosphorus, and an active layer not containing phosphorus but containing arsenic.;SOLUTION: The semiconductor laser element has an n-type clad layer 103 of n^- type (Al_0.3Ga_0.7)_0.5In_0.5P, an updoped active layer 104, and a first p-type clad layer 105 of p^- type (Al_0.3Ga_0.7)_0.5In_0.5P, deposited sequentially from the underside. The active layer 104 has a multiple quantum well structure consisting of: a first light guide layer of undoped Al_0.4Ga_0.6As; an alternate laminate of a well layer of undoped GaAs and a barrier layer of undoped Al_0.4Ga_0.6As; and a second light guide layer of undoped Al_0.4Ga_0.6As, deposited sequentially from the underside.;COPYRIGHT: (C)2005,JPO&NCIPI