Method of manufacturing a low-voltage-driven field emitter array

摘要

PROBLEM TO BE SOLVED: To provide a method of uniformly manufacturing a low voltage driven field emitter array having a gate hole of a diameter not more than 1μm in a short time on a silicon substrate. ;SOLUTION: When a gate insulating film 44 is formed in a manufacturing method of a field emitter array, the size of a gate hall 48 can be narrowed by using a selective oxidation (LOCOS) process to be utilized in a semiconductor process. A gate electrode layer 45 is formed on the basis of this diminished gate hole 48, and a low voltage drivable field emitter array small as a whole can be manufactured by forming an field emission chip 47 corresponding to this gate electrode layer.;COPYRIGHT: (C)1997,JPO