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It is low method and the device for energy by the micro jet in plasma processing ion occurrence and transport

机译:等离子体处理中离子的产生与输送中的微喷射能量低的方法及装置

摘要

Topic Low offer occurrence of the energy which is used with plasma processing of the semiconductor wafer ion and transporting system and the device.SolutionsGenerating the plasma from gas kind, it forms plasma discharges, style introduces into the processing room 16. Ion content in the midst of plasma discharges style is increased by operating auxiliary ion source 74, primary plasma discharge is formed during plasma discharges style with that. Next, primary plasma discharge is forwarded in baffle plate assembly 54, when the plasma flows out from baffle plate assembly 54, secondary plasma discharge is formed. It occurs and due to primary plasma discharge and during secondary plasma discharging strength of the electric field which operates the ion which is included is decreased, the ion collides to wafer 18 low by the energy which does not give the damage to the semiconductor device which was formed on wafer 18 with that. Selective figure Figure 1
机译:<主题>半导体晶片离子和传输系统及装置的等离子处理所用的能量低。解决方法从气体中产生等离子,形成等离子放电,将其引入处理室16。通过操作辅助离子源74来增加等离子体放电方式的中间,由此在等离子体放电方式期间形成初级等离子体放电。接下来,当等离子体从挡板组件54流出时,初级等离子体放电在挡板组件54中前进,从而形成次级等离子体放电。由于一次等离子体放电的发生,并且在二次等离子体放电期间,使所包含的离子起作用的电场的强度降低,因此离子以低的能量碰撞到晶片18,而该能量不会对半导体器件造成损坏。用这种方法在晶片18上形成<选择图>图1

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