METHOD AND APPARATUS FOR MICRO-JET ENABLED, LOW ENERGY ION GENERATION AND TRANSPORT IN PLASMA PROCESSING

摘要

I for use in plasma processing of a semiconductor wafer, a method of generating and transferring the energy ion disclosed There. In an exemplary embodiment of the invention, the method includes generating a plasma from a gas species to generate plasma exhaust gas. Next, the exhaust gas is introduced into the plasma processing chamber for receiving a wafer. Ion content of the plasma when the plasma is generated, the exhaust gas is discharged to the inside of the first being inserted into the process chamber, it is improved by activating an additional ion source. Next, the primary plasma discharge is directed by a control panel assembly, through the control panel assembly to produce a secondary plasma discharge exiting. 2, the strength of the electric field applied to the ions contained in the primary plasma discharge is reduced. According to this manner, the electric field intensity is reduced to the ions impact the wafer with an energy insufficient to cause damage to semiconductor devices formed on the wafer.