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Plasma flood system-physics of low energy electron generation, plasma coupling, electron transport and surface charge neutralization on wafer

机译:等离子体溢流系统-晶片上低能电子的产生,等离子体耦合,电子传输和表面电荷中和的物理学

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Plasma Flood System (PFS) was developed for the Precision Implant 9500 to achieve the most advanced charging control on wafer surface for high throughput implant processes over a wide range of beam current. A novel configuration of plasma discharge chamber made it possible to generate primary electrons at between 0 eV and 5 eV while maintaining a high emission current of over 100 mA. Space charge limit in generating low energy electrons was overcome by combining the arc discharge chamber at the anode potential with a negatively biased confinement tube via a potential shielding. Magnetic field from the plasma source coupled with a filament induced field plays an important role in transporting low energy electrons out of the chamber. The system also has a feature to increase the emission by one order of magnitude by offsetting a reference potential of the plasma source. This paper discusses the physics of the PFS describing how the electrons are generated at below 5 eV and transported at a high flux into the guide tube held typically at -10 V.
机译:等离子溢流系统(PFS)是为Precision Implant 9500开发的,旨在在晶片表面上实现最先进的充电控制,以在宽的束流范围内实现高通量的注入过程。等离子体放电室的新颖配置使其可以在0 eV到5 eV之间产生一次电子,同时保持超过100 mA的高发射电流。通过将位于阳极电位的电弧放电室与负偏压的限制管通过电位屏蔽相结合,克服了产生低能电子时的空间电荷限制。来自等离子体源的磁场与细丝感应场耦合在将低能电子移出腔室中起着重要作用。该系统还具有通过抵消等离子体源的参考电势将发射增加一个数量级的功能。本文讨论了PFS的物理原理,描述了如何在低于5 eV的电压下生成电子并以高通量将其传输到通常保持在-10 V的导管中。

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