The organicity amino tantalum compound and the raw materials solution for organicity metal chemical evaporation which includes this and the nitriding tantalum film null following

摘要

PROBLEM TO BE SOLVED: To obtain a new compound useful for a solution raw material for organic metal chemical vapor deposition, which is in a liquid state at room temperature, is uniformly and stably vaporized and can impart high purity tantalum nitride film at a high film-forming rate. ;SOLUTION: This new compound is expressed by the formula. The compound is useful for forming tantalum nitride as a substrate barrier in forming copper thin film used for wiring semiconductor devices. The tantalum nitride film is e.g. formed by the organic metal chemical vapor deposition method on SiO2 film on the surface of silicon substrate. On the tantalum nitride film, copper thin film is formed by the organic metal chemical vapor deposition method.;COPYRIGHT: (C)2000,JPO