PROPERTIES OF METALORGANIC CHEMICAL VAPOR DEPOSITED TANTALUM NITRIDE THIN FILMS

摘要

Low-resistivity tantalum nitride (TaN) films have been successfully realized by low-pressure metalorganic chemical vapor deposition using a new precursor TBTDMT (ter-butylimido-tris-dimethylamino tantalum). Data from transmission electron microscopy (TEM) and x-ray diffraction (XRD) analysis indicated that 600 ℃ as-deposited films exhibit the polycrystalline structure with <200> preferred orientation. CVD TaN films have been investigated as diffusion barriers for Cu and Al interconnections.