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It minds the pattern mask for exposure

机译:介意图案掩膜曝光

摘要

PROBLEM TO BE SOLVED: To obtain a lead frame with good quality, by preventing its lead portion, etc., from deforming when peeling its resist film therefrom in the case of using a photoetching method. ;SOLUTION: As this method, first, subjecting a photosensitive resin layer formed on the surface of a metallic raw material 1 to a pattern exposure via an exposure pattern mask, its development and hard-film processing are performed thereafter to change it into a resist film 2 with metallic surfaces exposed partially to the outside after a predetermined pattern. Then, an etching processing is applied to the metallic raw material 1. Thereafter, the resist film 2 is peeled from the metallic raw material 1. In this case, the hard-film processing is so performed as to bake the photosensitive resin layer at an atmospheric temperature of 135-165°C after contacting with it a chromic acid solution having a chromic anhydride concentration of 5-6wt.%.;COPYRIGHT: (C)1998,JPO
机译:解决的问题:在使用光刻法的情况下,通过从其引线部分等上剥离其抗蚀剂膜时防止其引线部分等变形,从而获得高质量的引线框架。 ;解决方案:作为该方法,首先,通过曝光图案掩模对形成在金属原料1的表面上的光敏树脂层进行图案曝光,然后对其显影和硬膜处理,以将其变为抗蚀剂。膜2具有金属表面,该金属表面在预定图案之后部分暴露于外部。然后,对金属原料1进行蚀刻处理。然后,从金属原料1上剥离抗蚀剂膜2。在这种情况下,进行硬膜处理,以在感光性树脂层上烘烤感光性树脂层。与铬酸酐浓度为5-6wt。%的铬酸溶液接触后在135-165°C的大气温度下进行;版权:(C)1998,JPO

著录项

  • 公开/公告号JP3596179B2

    专利类型

  • 公开/公告日2004-12-02

    原文格式PDF

  • 申请/专利权人 凸版印刷株式会社;

    申请/专利号JP19960192337

  • 发明设计人 久野 久;真野 隆夫;

    申请日1996-07-22

  • 分类号H01L23/50;C23F1/00;G03F7/40;

  • 国家 JP

  • 入库时间 2022-08-21 22:26:32

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