首页> 外国专利> TAPERED STRUCTURE FOR PROVIDING COUPLING BETWEEN EXTERNAL OPTICAL DEVICE AND PLANAR OPTICAL WAVEGUIDE AND METHOD OF FORMING THE SAME

TAPERED STRUCTURE FOR PROVIDING COUPLING BETWEEN EXTERNAL OPTICAL DEVICE AND PLANAR OPTICAL WAVEGUIDE AND METHOD OF FORMING THE SAME

机译:提供外部光学器件和平面光学波导之间耦合的锥形结构及其形成方法

摘要

Methods of forming a tapered evanescent coupling region for use with a relatively thin silicon optical waveguide formed with, for example, an SOI structure. A tapered evanescent coupling region is formed in a silicon substrate that is used as a coupling substrate, the coupling substrate thereafter joined to the SOI structure. A gray-scale photolithography process is used to define a tapered region in photoresist, the tapered pattern thereafter transferred into the silicon substrate. A material exhibiting a lower refractive index than the silicon optical waveguide layer (e.g., silicon dioxide) is then used to fill the tapered opening in the substrate. Advantageously, conventional silicon processing steps may be used to form coupling facets in the silicon substrate (i.e., angled surfaces, V-grooves) in an appropriate relation to the tapered evanescent coupling region. The coupling facets may be formed contiguous with the tapered evanescent coupling region, or formed through the opposing side of the silicon substrate.
机译:形成用于与例如SOI结构形成的相对较薄的硅光波导一起使用的锥形渐逝耦合区域的方法。在用作耦合基板的硅基板中形成锥形的渐逝耦合区域,此后,该耦合基板接合至SOI结构。灰度光刻工艺用于在光致抗蚀剂中限定锥形区域,然后将锥形图案转移到硅衬底中。然后使用具有比硅光波导层低的折射率的材料(例如二氧化硅)来填充衬底中的锥形开口。有利地,可以使用常规的硅处理步骤来以与渐逝的渐逝耦合区域适当的关系在硅衬底中形成耦合面(即,成角度的表面,V形槽)。耦合面可以形成为与锥形渐逝耦合区域相邻,或者穿过硅基板的相对侧形成。

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