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Magnetic random access memory device and a method of switching a magnetic orientation of memory elements therein
Magnetic random access memory device and a method of switching a magnetic orientation of memory elements therein
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机译:磁性随机存取存储装置以及在其中切换存储元件的磁性取向的方法
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摘要
An aspect of the present invention is an MRAM device. The MRAM device includes a plurality of magnetic memory elements, a sense line coupled to the plurality of magnetic memory elements for sensing a magnetic orientation of each of the plurality of magnetic memory elements wherein the sense line includes a first via and a second via and wherein the sense line is utilized to thermally assist in switching a magnetic orientation of at least one of the plurality of magnetic memory elements.
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