In2O3 thin film resistivity control by doping metal oxide insulator for MFMox device applications

摘要

The present invention discloses a novel ferroelectric transistor design using a resistive oxide film in place of the gate dielectric. By replacing the gate dielectric with a resistive oxide film, and by optimizing the value of the film resistance, the bottom gate of the ferroelectric layer is electrically connected to the silicon substrate, eliminating the trapped charge effect and resulting in the improvement of the memory retention characteristics. The resistive oxide film is preferably a doped conductive oxide in which a conductive oxide is doped with an impurity species. The doped conductive oxide is most preferred to be In₂O₃ with the dopant species being hafnium oxide, zirconium oxide, lanthanum oxide, or aluminum oxide.