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Method for chemical mechanical planarization (CMP) and chemical mechanical cleaning (CMC) of a work piece
Method for chemical mechanical planarization (CMP) and chemical mechanical cleaning (CMC) of a work piece
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机译:用于工件的化学机械平坦化(CMP)和化学机械清洁(CMC)的方法
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摘要
A method is provided for planarizing/polishing and subsequently in situ cleaning a surface of a work piece such as a semiconductor wafer. The method includes the steps of planarizing/polishing the surface of a work piece by subjecting a work piece surface to a chemical mechanical planarization/polishing (CMP) process on a chemical mechanical planarization/polishing platen such that the planarization/polishing process leaves the surface of the work piece hydrophobic. The planarization/polishing process is followed by a chemical mechanical cleaning (CMC) process in which the planarized/polished surface of the work piece is subjected to the cleaning process on the same chemical mechanical planarization/polishing platen such that the cleaning process leaves the surface of the work piece hydrophilic.
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