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Bipolar transistor including an improved emitter structure for large emitter current free of decrease in direct current amplification factor and design method therefor
Bipolar transistor including an improved emitter structure for large emitter current free of decrease in direct current amplification factor and design method therefor
A modified bipolar transistor defined for providing a larger emitter current than a basic emitter current from a basic bipolar transistor is provided. The modified transistor has an improved emitter structure comprising plural divided sub-emitter regions electrically isolated and spatially separated from each other. The plural divided sub-emitter regions may typically have a uniform emitter size identical with a basic emitter size of the basic bipolar transistor. A set of the plural divided sub-emitter regions provides an intended emitter current distinctly larger than the basic emitter current by a highly accurate direct current amplification factor corresponding to an intended emitter-size magnification factor.
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