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METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD OF ADJUSTING CURRENT AMPLIFICATION FACTOR OF BIPOLAR TRANSISTOR WITH EMITTER POLYSILICON ELECTRODE STRUCTURE
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD OF ADJUSTING CURRENT AMPLIFICATION FACTOR OF BIPOLAR TRANSISTOR WITH EMITTER POLYSILICON ELECTRODE STRUCTURE
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机译:发射极多晶硅电极结构的半导体器件制造方法和调节双极晶体管的电流放大系数的方法
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摘要
PROBLEM TO BE SOLVED: To cope with both the cost reduction and the high frequency response characteristics of a longitudinal NPN bipolar transistor having a polysilicon emitter electrode structure, by controlling the current amplification factor of the transistor without adding any process.;SOLUTION: On forming an emitter polysilicon 190 at low temperatures (400°C), an interfacial oxide film (natural oxide film) grows between an intrinsic base 140 and the emitter 190. Then the heat treating temperature for forming an emitter 150 is adjusted in a range of 820-910°C to control the interfacial oxide film condition and the pile up condition of electrons, thus finely adjusting the current amplification factor.;COPYRIGHT: (C)2008,JPO&INPIT
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