首页> 外国专利> Method of forming a read sensor using photoresist structures without undercuts which are removed using chemical-mechanical polishing (CMP) lift-off processes

Method of forming a read sensor using photoresist structures without undercuts which are removed using chemical-mechanical polishing (CMP) lift-off processes

机译:使用光致抗蚀剂结构形成读取传感器的方法,该方法不具有通过化学机械抛光(CMP)剥离工艺去除的底切

摘要

A method of making a read sensor which defines its stripe height before its trackwidth using photoresist layers formed without undercuts is disclosed. The photoresist layers are removed using chemical-mechanical polishing (CMP) lift-off techniques instead of using conventional solvents. In particular, a first photoresist layer is formed in a central region over a plurality of read sensor layers. End portions of the read sensor layers around the first photoresist layer are removed by ion milling to define the stripe height for the read sensor. Next, insulator layers are deposited where the end portions of the read sensor layers were removed. The first photoresist layer is then removed through mechanical interaction with a CMP pad. In subsequently defining the trackwidth for the read sensor, a second photoresist layer is formed in a central region over the remaining read sensor layers. End portions of the read sensor layers around the second photoresist layer are then removed by ion milling to define the trackwidth for the read sensor. Next, hard bias and lead layers are deposited where the end portions of the read sensor layers were removed. The second photoresist layer is then removed through mechanical interaction with the CMP pad. Preferably, protective layers (e.g. carbon) between the photoresist layers and the read sensor layers are formed prior to photoresist removal. Thus, problems including those inherent with use of photoresist structures having undercuts are eliminated.
机译:公开了一种制造读取传感器的方法,该方法使用形成有底切的光致抗蚀剂层在其轨迹宽度之前限定其条带高度。使用化学机械抛光(CMP)剥离技术而不是使用常规溶剂去除光致抗蚀剂层。特别地,在多个读取传感器层上方的中央区域中形成第一光致抗蚀剂层。通过离子铣削去除围绕第一光刻胶层的读取传感器层的端部,以限定读取传感器的条纹高度。接下来,在去除读取传感器层的端部的地方沉积绝缘体层。然后通过与CMP垫的机械相互作用来去除第一光刻胶层。在随后限定用于读取传感器的轨道宽度时,在剩余的读取传感器层上方的中心区域中形成第二光致抗蚀剂层。然后通过离子铣削去除围绕第二光刻胶层的读取传感器层的端部,以限定读取传感器的迹线宽度。接下来,在去除读取传感器层的端部的地方沉积硬偏置层和引线层。然后通过与CMP垫的机械相互作用来去除第二光刻胶层。优选地,在去除光致抗蚀剂之前,在光致抗蚀剂层和读取传感器层之间形成保护层(例如碳)。因此,消除了包括使用具有底切的光刻胶结构所固有的那些问题。

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