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METHODS OF FORMING FIELD EFFECT TRANSISTORS AND METHODS OF FORMING FIELD EFFECT TRANSISTOR GATES AND GATE LINES
METHODS OF FORMING FIELD EFFECT TRANSISTORS AND METHODS OF FORMING FIELD EFFECT TRANSISTOR GATES AND GATE LINES
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机译:场效应晶体管的形成方法以及场效应晶体管的栅极和栅极线的形成方法
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摘要
In one implementation, a method of forming a field effect transistor includes etching an opening into source/drain area of a semiconductor substrate. The opening has a base comprising semiconductive material. After the etching, insulative material is formed within the opening over the semiconductive material base. The insulative material less than completely fills the opening and has a substantially uniform thickness across the opening. Semiconductive source/drain material is formed within the opening over the insulative material within the opening. A transistor gate is provided operatively proximate the semiconductive source/drain material. Other aspects and implementations are contemplated.
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