Gate drive device for reducing a surge voltage and switching loss

摘要

In a circuit having MOS transistors connected in series, a surge voltage that occurs during off periods is reduced, while suppressing an increase in switching loss at turning off of the MOS transistors. When a first power MOSFET (1) is turned off and then a second power MOSFET (2) is turned on after that according to predetermined timing, the first power MOSFET (1) is temporarily placed in an on state for a predetermined time period synchronized with that predetermined timing. On the other hand, when the second power MOSFET (2) is turned off and then the first power MOSFET (1) is turned on after that according to predetermined timing, the second power MOSFET (2) is temporarily placed in an on state for a predetermined time period synchronized with that predetermined timing.