Realization of an 850V High Voltage Half Bridge Gate Drive IC with a New NFFP HVI Structure

摘要

A NFFP HVI structure which implements high breakdown voltage without using additional FFP and process steps is proposed in this paper. An 850 V high voltage half bridge gate drive IC with the NFFP HVI structure is experimentally realized using a thin epitaxial BCD process. Compared with the MFFP HVI structure, the proposed NFFP HVI structure shows simpler process and lower cost. The high side offset voltage in the half bridge gate drive IC with the NFFP HVI structure is almost as same as that with the self-shielding stru cture.