Nonvolatile memory device utilizing spin-valve-type designs and current pulses

摘要

A memory device includes a plurality of memory elements each having: an antiferromagnetic layer, a first pinned layer coupled to the antiferromagnetic layer, a nonmagnetic spacer layer coupled to the first pinned layer, a second pinned layer coupled to the spacer, and a free layer coupled to the second pinned layer. A plurality of single wiring circuits are provided, each wiring circuit being coupled to a memory element. An addressing mechanism applies current pulses to the memory elements via the single wiring circuits for writing to the memory elements. The addressing mechanism also applies a sense current to the memory elements via the single wiring circuits for reading the memory elements.