Design and fabrication method for finger n-type doped photodiodes with high sensitivity for CIS products

摘要

A novel structure for a photodiode is disclosed. It is comprised of a p-type region, which can be a p-substrate or p-well, extending to the surface of a semiconductor substrate. A multiplicity of parallel finger-like n-wells is formed in the p-type region. The fingers are connected to a conductive region at one end.