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Silicon single crystal growing furnace supplemented with low melting point dopant feeding instrument and the low melting point dopant feeding method thereof
Silicon single crystal growing furnace supplemented with low melting point dopant feeding instrument and the low melting point dopant feeding method thereof
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机译:补充了低熔点掺杂剂供给装置的硅单晶生长炉及其低熔点掺杂剂供给方法
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摘要
A silicon single crystal growing apparatus supplemented with a low melting point dopant feeding instrument and a low melting point dopant feeding method thereof for producing a heavily doped silicon single crystal with a dopant of low melting point. The apparatus includes a quartz crucible containing molten silicon liquid, a heating unit supplying the quartz crucible with a radiant heat, a crystal pulling lifter pulling up a silicon single crystal from a molten silicon liquid contained in the quartz crucible, and a low melting point dopant feeding instrument. The low melting point dopant feeding instrument includes a sidewall portion, an upper portion, and an open bottom portion with net-like structure having many holes, the sidewall and upper portions being vacuum-tight sealed. The method includes the steps of loading a low melting point dopant inside a low melting point dopant feeding instrument having vacuum-tight sealed sidewall and upper portions and an open bottom portion with net-like structure having many holes, and dipping the bottom portion of the low melting point dopant feeding instrument in a molten silicon liquid contained inside a quartz crucible. The low melting point dopant is directly dissolved in the molten silicon liquid or evaporated and then finally dissolved in the form of a gas phase into the molten silicon liquid through the open holes of the bottom portion of the melting point dopant feeding instrument.
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