A silicon single crystal grower with an apparatus for doping the dopants of low melting point and a method for doping the dopants of low melting point

摘要

PURPOSE: A silicon single crystal growth apparatus having a device for doping the dopants of low melting point and a low melting point dopant doping method are provided to be capable of controlling the implantation concentration of low melting point dopants without the contamination of a growth crucible and minimizing the waste of the dopants. CONSTITUTION: A silicon single crystal growth apparatus includes a quartz crucible for storing and melting polycrystalline silicon, a heat supply part for emitting heat to the quartz crucible, and a silicon single crystal lifter for extracting a silicon single crystal from the melted silicon. The silicon single crystal growth apparatus further includes a low melting point dopant doping tube(100). At this time, the low melting point dopant doping tube includes a lattice type lower net(103).