An Apparatus For Doping Low- Melting-Point Dopants For Silicon Single Crystal Grower

摘要

The present invention relates to a low melting point dopant implantation apparatus for injecting, and more particularly a melting point of the low melting point lower than that of silicon dopant agent on the dopant implantation apparatus of a silicon single crystal growing apparatus at a high concentration in the silicon melt. To this end, the dopant implantation apparatus of the present invention, a low-melting-point dopant implantation apparatus of silicon single crystal growth apparatus for producing a Czochralski method, a plurality of through holes on the lower surface is formed, and a cover for the dopant supply to the upper surface the installation, the other side is a sealed casing and; It is provided at the lower side and a distance of the casing inside the casing, a low melting point and a dopant is loaded therein, the dopant receiving portion is formed with a plurality of through holes on the side; Wherein the low-melting the dopant is configured to include a connecting portion connecting the casing and the silicon single crystal lifter to be V POSITION of the injection device, the lower surface of the casing is soaked in the silicon melt dopant receiving portion spaced from the melt surface conditions. and in characterized in that the dopant is implanted into the silicon melt through the respective through holes.