首页> 外国专利> Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process

Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process

机译:使用超临界二氧化碳工艺去除半导体中的光刻胶和光刻胶残留物

摘要

A method of removing a photoresist or a photoresist residue from a semiconductor substrate is disclosed. The semiconductor substrate with the photoresist or the photoresist residue on a surface of the semiconductor substrate is placed within a pressure chamber. The pressure chamber is then pressurized. Supercritical carbon dioxide and a stripper chemical are introduced to the pressure chamber. The supercritical carbon dioxide and the stripper chemical are maintained in contact with the photoresist or the photoresist residue until the photoresist or the photoresist residue is removed from the semiconductor substrate. The pressure chamber is then flushed and vented.
机译:公开了一种从半导体衬底去除光刻胶或光刻胶残留物的方法。将在半导体衬底的表面上具有光致抗蚀剂或光致抗蚀剂残留物的半导体衬底放置在压力室内。然后对压力室加压。将超临界二氧化碳和汽提塔化学品引入压力室。使超临界二氧化碳和剥离剂化学物质与光致抗蚀剂或光致抗蚀剂残余物保持接触,直到从半导体衬底去除光致抗蚀剂或光致抗蚀剂残余物为止。然后冲洗压力腔并排气。

著录项

  • 公开/公告号US6871656B2

    专利类型

  • 公开/公告日2005-03-29

    原文格式PDF

  • 申请/专利权人 WILLIAM H. MULLEE;

    申请/专利号US20020255822

  • 发明设计人 WILLIAM H. MULLEE;

    申请日2002-09-25

  • 分类号B08B3/08;

  • 国家 US

  • 入库时间 2022-08-21 22:20:19

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