Recessed gate electrode MOS transistors having a substantially uniform channel length across a width of the recessed gate electrode and methods of forming same

摘要

A transistor can include an integrated circuit substrate including spaced apart isolation regions therein and an active region therebetween. A recess is formed in the active region and extends between the spaced apart isolation regions and has a bottom and opposing side wall ends that are defined by facing portions of the spaced apart isolation regions. An electrically insulating layer is formed on the bottom of the recess. A conductive material is formed in the recess on the electrically insulating layer to provide a gate electrode.