System and method for fabricating a transistor by a low temperature heat treatment process

摘要

The invention provides a method for fabricating a transistor in which the bulk characteristics of the gate insulating film and the interface characteristics can be simultaneously improved by a low-temperature process. The method can include the step of forming a semiconductor film on a substrate, the step of forming a gate insulating film on the semiconductor film by depositing a silicon oxide film by a diode parallel plate plasma enhanced CVD process using at least TEOS and oxygen as source materials, the step of forming a metal film, which accelerates the decomposition of gases permeated into the gate insulating film, on the gate insulating film, and the step of performing low-temperature heat treatment on the gate insulating film. Accordingly, it is possible to form high-quality gate insulating film having both satisfactory bulk and interface characteristics by a low temperature process.