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Method for fabricating a P-N heterojunction device utilizing HVPE grown III-V compound layers and resultant device
Method for fabricating a P-N heterojunction device utilizing HVPE grown III-V compound layers and resultant device
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机译:利用HVPE生长的III-V族化合物层制造P-N异质结器件的方法和所得器件
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摘要
A method for fabricating a p-n heterojunction device is provided, the device being preferably comprised of an n-type GaN layer co-doped with silicon and zinc and a p-type AlGaN layer. The device may also include a p-type GaN capping layer. The device can be grown on any of a variety of different base substrates, the base substrate comprised of either a single substrate or a single substrate and an intermediary layer. The device can be grown directly onto the surface of the substrate without the inclusion of a low temperature buffer layer.
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