TITANIUM NITRIDE THIN FILM FORMATION ON METAL SUBSTRATE BY CHEMICAL VAPOR DEPOSITION IN A MAGNETIZED SHEET PLASMA SOURCE

摘要

Title: TITANIUM NITRIDE THIN FILM FORMATION ON METALSUBSTRATE BY CHEMICAL VAPOR DEPOSITION IN A MAGNETIZED SHEET PLASMA SOURCEAbstract: A procedure for the synthesis of titanium nitride (UN) thin films on metal substrate by vapor deposition using a magnetized sheet plasma source is disclosed. TIN films on metal substrate exhibiting the stoichiometric TiN and Ti[err]N were synthe-sized in a mixed N[err]/Ar plasma with initial gas filling ratio of preferably 1:3 under the following conditions: total initial gas filling pressure of at least about 40 mTorr, plasma current in the range of about 2A to about 3A and plasma discharge potential in the range of about 125V to about 15OV.