RAPID THERMAL ANNEALING OF SILICON STRUCTURES

摘要

RAPID THERMAL ANNEALING OF SILICON STRUCTURESABSTRACTIn a single step rapid thermal annealing (SS-RTA) process, a semiconductor material is annealed in a single step at an elevated temperature for a predetermined time in an atmosphere of oxygen. Preferably, polycrystalline silicon is annealed at 900 to 1100 [err]C for 20 to 40 seconds. The SS-RTA process is used to anneal out and reduce defects and lower device leakage currents after ion implantation during fabrication of MOSFET semi -conductor devices such as high-density memory; e.g. flash memories and SRAM.(Figure 3)