首页> 外国专利> GETTER-BASED GAS PURIFIER, ITS USES IN A SEMICONDUCTOR MANUFACTURING SYSTEM AND IN A METHOD OF MAKING AN INTEGRATED CIRCUIT DEVICE AND A METHOD OF PROTECTING A GETTER COLUMN

GETTER-BASED GAS PURIFIER, ITS USES IN A SEMICONDUCTOR MANUFACTURING SYSTEM AND IN A METHOD OF MAKING AN INTEGRATED CIRCUIT DEVICE AND A METHOD OF PROTECTING A GETTER COLUMN

机译:基于吸气剂的气体净化器,其在半导体制造系统中的应用以及制造集成电路装置的方法和保护吸气剂塔的方法

摘要

A semiconductor manufacturing system includes a getter-based gas purifier coupled in flow communication with a gas distribution network for a semiconductor fabrication facility. The gas distribution network supplies purified gas to at least one wafer processing chamber in the semiconductor fabrication facility. The gas purifier includes a getter column having a metallic vessel with an inlet, an outlet, and a containment wall extending between the inlet and the outlet. Getter material which purifies gas flowing therethrough by sorbing impurities therefrom is disposed in the vessel. A first temperature sensor is disposed in a top portion of the getter material. The first temperature sensor is located in a melt zone to detect rapidly the onset of an exothermic reaction which indicates the presence of excess impurities in the incoming gas to be purified. A second temperature sensor is disposed in a bottom portion of the getter material. The second temperature sensor is located in a melt zone to detect rapidly the onset of an exothermic reaction which indicates that excess impurities are being backfed into the getter column. First and second high melting point, nonmetallic liners are disposed in the vessel such that at least some of the top and bottom portions, respectively, of the getter material is separated from the containment wall of the vessel. A getter-based gas purifier, a method of making an integrated circuit device, and a method of protecting a getter column are also described.
机译:半导体制造系统包括与用于半导体制造设施的气体分配网络流动连通地耦合的基于吸气剂的气体净化器。气体分配网络将纯化的气体供应到半导体制造设备中的至少一个晶片处理室。气体净化器包括具有金属容器的吸气剂塔,该金属容器具有入口,出口以及在入口和出口之间延伸的安全壳壁。通过吸收来自其中的杂质来净化流过其中的气体的吸气材料被放置在容器中。第一温度传感器设置在吸气材料的顶部中。第一温度传感器位于熔融区中,以迅速检测出放热反应的开始,该反应表明要纯化的进料气体中存在过量杂质。第二温度传感器设置在吸气材料的底部中。第二个温度传感器位于熔体区中,可以迅速检测到放热反应的开始,这表明过量的杂质正反馈到吸气塔中。第一和第二高熔点非金属衬里设置在容器中,使得吸气剂材料的顶部和底部中的至少一些分别与容器的容纳壁分离。还描述了一种基于吸气剂的气体净化器,一种制造集成电路器件的方法以及一种保护吸气剂柱的方法。

著录项

  • 公开/公告号EP1028797B1

    专利类型

  • 公开/公告日2005-05-18

    原文格式PDF

  • 申请/专利权人 SAES PURE GAS INC;

    申请/专利号EP19980952101

  • 发明设计人 APPLEGARTH CHARLES H.;LORIMER DARCY H.;

    申请日1998-10-02

  • 分类号B01D53/04;C30B25/14;C23C16/44;

  • 国家 EP

  • 入库时间 2022-08-21 22:10:40

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