Nonvolatile silicon/oxide/nitride/silicon/nitride/oxide/silicon memory

摘要

A nonvolatile silicon/oxide/nitride/silicon/nitride/oxide/silicon (SONSNOS) memory is provided. The provided SONSNOS memory includes first and second insulating layers (111a,111b) stacked on the channel of the substrate, first and second dielectric layers (113a,113b) formed on the first insulating layer (111a) and under the second insulating layer (111b), respectively, a group IV semiconductor layer (115), silicon quantum dots, or metal quantum dots interposed between the first and second dielectric layers (113a,113b). The provided SONSNOS memory improves a programming rate and the capacity of the memory.