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METHOD FOR THE PRODUCTION OF SONOS MEMORY CELLS, SONOS MEMORY CELL, AND MEMORY CELL FIELD
METHOD FOR THE PRODUCTION OF SONOS MEMORY CELLS, SONOS MEMORY CELL, AND MEMORY CELL FIELD
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机译:SONOS记忆细胞,SONOS记忆细胞和记忆细胞场的生产方法
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摘要
Disclosed is an Si body (1) in which a ditch (2) is created, the walls (4) of said ditch (2) being provided with a nitrogen implant (6). An oxide layer which is disposed between the source/drain areas (5) and a word line that is applied to the upper face grows thicker than a lower oxide layer of an ONO storage layer that is created on the ditch wall as a gate dielectric. A metal silicide layer can be created on the upper faces of the source/drain areas instead of the nitrogen implant in the ditch walls in order to accelerate oxide growth there.
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