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METHOD FOR FABRICATING SEMICONDUCTOR DEVICE FOR ACCURATELY SETTING RESISTANCE VALUE OF RESISTANCE ELEMENT AND FOR SUPPRESSING UNEVENNESS IN RESISTANCE VALUE ON SURFACE OF WAFER
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE FOR ACCURATELY SETTING RESISTANCE VALUE OF RESISTANCE ELEMENT AND FOR SUPPRESSING UNEVENNESS IN RESISTANCE VALUE ON SURFACE OF WAFER
PURPOSE: A method for fabricating a semiconductor device is provided to set a resistance of a resistance element with high accuracy by forming the resistance element on a transistor and an isolation layer. CONSTITUTION: An isolation layer(2) is formed in a main surface of a semiconductor substrate(1). A gate insulating layer is formed on the main surface of the semiconductor substrate. A semiconductor layer is formed on the isolation insulating layer and on the gate insulating layer. A resistance element is formed on the isolation layer and a gate electrode is formed on the gate insulating film by patterning the semiconductor layer. A mask material is formed so as to cover the resistance element. A first source/drain region is formed in the main surface of the semiconductor substrate by ion-implanting first impurities of a first conductive type. A sidewall spacer is formed on a side surface of the resistance element. A second source/drain is formed by an ion implantation using second impurities of the first conductivity type. A thermal treatment is performed to activate the second impurities.
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