METHOD AND APPARATUS FOR CRYSTALLIZING SEMICONDUCTOR LAYER TO FORM GRAINS OF DESIRED SURFACE ORIENTATION ON SEMICONDUCTOR LAYER, SEMICONDUCTOR DEVICE, FABRICATING METHOD THEREOF, DISPLAY DEVICE, AND PHASE SHIFTER

摘要

PURPOSE: A method and an apparatus for crystallizing a semiconductor layer, a semiconductor device, a fabricating method thereof, a display device, and a phase shifter are provided to form a single crystal region of a desired surface orientation on an entire surface or a selected surface irrespective to a large-area amorphous semiconductor layer. CONSTITUTION: A semiconductor layer is formed on one side of a substrate(301). The semiconductor layer includes a crystallization region. A surface of the crystallization region is formed with a grain of a rectangular shape. A crystal orientation of a section perpendicular to the crystallization region is (001) plane . A current direction within the crystal region flows in the (001) plane to operate a semiconductor device.