RAPID ENERGY-TRANSFER ANNEALING APPARATUS AND METHOD FOR CRYSTALLIZE EFFECTIVELY AMORPHOUS-Si THIN FILM AND PREVENTING DAMAGE OF GLASS SUBSTRATE

摘要

Purpose: a kind of quick energy-transfer annealing device and method are arranged to effectively crystallize an amorphous si film and prevent the damage of a glass substrate due to a high temperature simultaneously. Construction: a device (30) includes a light source (36), an energy source plate (34) for the quick energy-transfer annealing, its temperature for being used to increase it, it uses the main photon of light source, a part for being annealed, a radiator (35), separate with annealing portion, heat insulation layer, a heat deflection layer and a recuperation layer. It include a substrate (331) and the amorphous layer (333) on substrate to be annealed the part of (33). Amorphous layer is converted into a polycrystalline layer by using the thermal energy of energy source plate. Heat insulation layer (332) is between substrate and amorphous layer. Heat deflection layer is between substrate and heat insulation layer. One solid medium and/or gas medium are inserted in can one first part between source plate and the part of annealing and the second part between the part and radiator of annealing.