Method of manufacturing a SiC thin film with Si nano dot

摘要

PURPOSE: A method for fabricating a silicon carbide layer having silicon nano-dots is provided to emit a deposition process of an active layer or a passivasion layer and form the silicon nano-dot in the silicon carbide layer by controlling a mixing ratio between silicon carbide and silicon. CONSTITUTION: A mixed pulverulent body is formed in slurry by dissolving silicon carbide powders and silicon powders in the solvent(11). A green body is formed by drying the mixed pulverulent body in a molding frame(12). A mixed target of silicon carbide and silicon is formed by dipping the green body in metallic silicon of high purity(13). The mixed target is loaded into a reaction chamber(14). A silicon carbide layer having silicon nano-dots is deposited on a substrate by irradiating laser beam to the mixed target(15).