Method for forming nitrogen containing oxide thin film by plasma enhanced atomic layer deposition

摘要

PURPOSE: A method for forming an oxide layer containing nitrogen using a PEALD(Plasma Enhanced Atomic Layer Deposition) method is provided to enhance an electrical characteristic and an insulating characteristic by forming the oxide layer containing nitrogen. CONSTITUTION: A method for forming an oxide layer containing nitrogen using a PEALD method includes a first plasma generation process and a second plasma supply process. The first plasma generation process is to generate plasma on a substrate in proportional to a supply period of oxygen gas. The second plasma supply process is to generate the plasma on the substrate in proportional to a supply period of gas containing nitrogen. The oxygen gas and the gas containing nitrogen are simultaneously supplied in the same period.